Ghosh, B. and Ghosh, D. and Hussain, S. and Chakraborty, B. R. and Sehgal, G. and Bhar, R. and Pal, A. K. (2014) Inclusion of nano-Ag plasmonic layer enhancing the performance of p-Si/CdS solar cells. physica status solidi (a), 211 (4). 890-900 . ISSN 1862-6300

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Abstract

Introduction of plasmonic layer in p-Si/undoped CdS/indium doped CdS (p-Si/CdS/In:CdS) solar cell indicated an enhancement of short circuit current which improved the overall increase in efficiency. The location of n-Ag layer and the possible interdiffusion of n-Ag at the interface were examined critically by secondary ion mass spectroscopy. The effect of plasmonic layer in the above cell structure and its overall performance has been critically studied in terms of the morphology, particle size distribution, optical absorption, current-voltage (J-V) characteristics, capacitance-voltage (C-V) characteristics, and lifetime of the photo-generated carriers.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/S Wiley-VCH Verlag.
Uncontrolled Keywords:	electrical conductivity, SIMS, solar cells, surface plasmon
Subjects:	Materials Science Physics
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	13 Oct 2015 10:39
Last Modified:	13 Oct 2015 10:39
URI:	http://npl.csircentral.net/id/eprint/1345

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