-, Vandana and Batra, Neha and Gope, Jhuma and Singh, Rajbir and Panigrahi, Jagannath and Tyagi, Sanjay and Pathi, P. and Srivastava, S. K. and Rauthan, C. M. S. and Singh, P. K. (2014) Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films. Physical Chemistry Chemical Physics, 16 (39). 21804-21811 . ISSN 1463-9076
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Abstract
Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (similar to 100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV <10 cm s(-1)). The deduced values are close to the best reported SRV obtained by the high thermal budget process (with annealing time between 10-30 min), conventionally used for improved surface passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.
| Item Type: | Article |
|---|---|
| Subjects: | Chemistry Physics |
| Divisions: | UNSPECIFIED |
| Depositing User: | Dr. Rajpal Walke |
| Date Deposited: | 22 Sep 2015 10:49 |
| Last Modified: | 22 Sep 2015 10:49 |
| URI: | http://npl.csircentral.net/id/eprint/1245 |
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