Krishna TC, Shibin and Gupta, Govind (2014) Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment. RSC Advances, 4 (52). pp. 27308-27314. ISSN 2046-2069

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Abstract

InN/GaN heterostructure based Schottky diodes are fabricated by reactive Low Energy Nitrogen Ion (LENI) bombardment at low substrate temperature (300 degrees C). The valence band offset (VBO) of the nitrogen ion induced In-polar InN/GaN hetero-interface has been analyzed by X-ray photoelectron spectroscopy and it is determined to be 0.72 +/- 0.28 eV, a type-I straddled band alignment is formed at the InN/GaN interface. Fermi level pinning is observed to be 1.3 +/- 0.1 eV above the conduction band minimum resulting in a strong downward band bending. Valence band maxima of InN/GaN show that the surface electron accumulation occurs due to the presence of In adlayer on the film. Atomic force microscopy analysis divulged the formation of a step like InN structure on the GaN surface. I-V characteristic showed that the junction between InN and GaN exhibits a Schottky type behaviour. The room temperature barrier height and the ideality factor of the InN/GaN Schottky diodes are calculated by using the thermionic emission (TE) model and found to be 0.72 eV and 20.8 respectively

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/S RSC.
Subjects:	Chemistry
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	17 Sep 2015 05:30
Last Modified:	17 Sep 2015 05:30
URI:	http://npl.csircentral.net/id/eprint/1182

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