Maurya, Muni Raj and Toutam, Vijaykumar and Singh, Preetam and Bathula, Sivaiah (2019) Optimization of electroless plating of gold during MACE for through etching of silicon wafer. Materials Science in Semiconductor Processing, 100. pp. 140-144. ISSN 1369-8001

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Deep etching of silicon (Si) is very much desirable for wide variety of applications. Under the context, a cost effective and reproducible through etching of similar to 375 mu m thick Si wafer is demonstrated through long hour metal assisted chemical etching (MACE) followed by short duration KOH etching. During MACE, apart from pH and temperature, metal catalyst size and coverage density during electroless plating plays an important role. Optimization of gold deposition in terms of plating solution concentration and deposition time during MACE is studied for effective through etching. HAuCl4 concentration of similar to 5 mM for 30 s is found to be best suited for MACE and produces deep and highly dense pores in Si with threshold pore radius similar to 250 nm and above. Following the MACE, KOH etching effectively scoops out porous Si to realize through etching.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier.
Subjects: Engineering > Electronics and Electrical Engineering
Materials Science
Applied Physics/Condensed Matter
Depositing User: Mr. Yogesh Joshi
Date Deposited: 14 Jul 2021 11:37
Last Modified: 14 Jul 2021 11:37

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