Borkar, Hitesh and Thakre, Atul and Kushvaha, Sunil S. and Aloysius, R. P. and Kumar, Ashok (2015) Light assisted irreversible resistive switching in ultra thin hafnium oxide. RSC Advances, 5 (44). 35046-35051 . ISSN 2046-2069

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An ultra thin film (similar to 5 nm) high-k Hafnium oxide dielectric, grown on a doped p-Si(100) substrate by the atomic layer deposition technique has been investigated for resistive and capacitive switching with and without illumination of light. As grown samples illustrate small non-switching leakage current under high applied electric fields and probe frequencies and trap charge assisted counter-clockwise capacitance-voltage behavior. A unique resistance switching was observed under illumination of 15-60 mW light. In the first cycle, the light assisted switching provide a 10(4) : 1 resistance ratio, which diminishes in the next cycle onward, which may be due to irreversible charge injection in the oxide layers. The band offset and band match-up energy diagram for the charge carriers responsible for resistive switching and charge trapping near the interface have been demonstrated under the application of a bias electric field and light.

Item Type: Article
Subjects: Chemistry
Depositing User: Dr. Rajpal Walke
Date Deposited: 28 Sep 2016 08:08
Last Modified: 28 Sep 2016 08:08

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