Ramesh, Chodipilli and Tyagi, Prashant and Gupta, Govind and Kumar, Muthusamy Senthi and Kushvaha, Sunil Singh (2019) Influence of surface nitridation and an AlN buffer layer on the growth of GaN nanostructures on a flexible Ti metal foil using laser molecular beam epitaxy. Japanese Journal of Applied Physics, 58 (7). 079301. ISSN 0021-4922

PDF - Published Version Restricted to Registered users only Download (143Kb) | Request a copy

Abstract

On page 1, the sentence “Reference 29 reported the enhancement of GaN nanocolumn alignment when a thin AlN buffer layer was introduced on a graphene-layered Si substrate” is incorrect. It should read “Reference 28 reported the enhancement of GaN nanocolumn alignment when a thin AlN buffer layer was introduced on a graphene-layered silica glass substrate”.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Japan Society of Applied Physics.
Subjects:	Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Mr. Yogesh Joshi
Date Deposited:	19 Aug 2026 11:46
Last Modified:	19 Aug 2026 11:46
URI:	https://npl.csircentral.net/id/eprint/4387

Actions (login required)

View Item