Osipov, A. and Kukushkin, S. A. and Feoktistov, N. A. and Osipova, A. and Venugopal, N. and Verma, G. D. and Gupta, Bipin Kumar and Mitra, Anirban (2012) Structural and optical properties of high quality ZnO thin film on Si with SiC buffer layer. Thin Solid Films, 520 (23). 6836-6840. ISSN 0040-6090

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Abstract

ZnO thin films are grown on Si substrates with SiC buffer layer using ion plasma high frequency magnetron sputtering. These substrates are fabricated using a technique of solid phase epitaxy. With this technique SiC layer of thickness 20-200 nm had been grown on Si substrates consisting pores of sizes 0.5-5 mu m at SiC and Si interface. Due to mismatching in lattice constants as well as thermal expansion coefficients, elastic stresses have been developed in ZnO film. Pores at the interface of SiC and Si are acting as the elastic stress reliever of the ZnO films making them strain free epitaxial. ZnO film grown on this especially fabricated Si substrate with SiC buffer layer exhibits excellent crystalline quality as characterized using X-ray diffraction. Surface topography of the film has been characterized using Atomic Force Microscopy as well as Scanning Electron Microscopy. Chemical compositions of the films have been analyzed using Energy Dispersive X-ray Spectroscopy. Optical properties of the films are investigated using Photoluminescence Spectroscopy which also shows good optical quality.

Item Type:	Article
Additional Information:	copyright for this article belongs to M/s Elsevier
Subjects:	Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	19 Aug 2026 11:00
Last Modified:	19 Aug 2026 11:00
URI:	https://npl.csircentral.net/id/eprint/3412

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