Jeyakumar, R. and Gu, Z. and Sivoththaman, S. and Nathan, A. (2012) Synthesis and characterization of low-k films for large area imaging applications. Microelectronic Engineering, 99. 58-61. ISSN 0167-9317

PDF - Published Version Restricted to Registered users only Download (538Kb) | Request a copy

Abstract

An organic liquid polymer based on methyltriethoxysilane has been synthesized. The material;when spin-coated onto wafers and thermally treated;lead to dielectric films of low permittivity;which can be used in hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) based large area imaging arrays as an inter-level dielectric between the TFT and pixel levels. Fourier Transform Infrared Spectroscopy (FTIR) shows prominent peaks of Si-CH3 stretch and Si-O stretch modes. The dielectric constant (k) of the film was found to decrease with increasing curing temperature (T-cure). However;k values were < 3 for T-cure < 260 degrees C;which is the upper limit for our a-Si:H process. Thermogravimetric analysis showed that major weight loss takes place for up to 200 degrees C;and the film stabilizes thereafter. The stress in the films was found to be compressive;and increased from 50 to 220 MPa when T-cure was increased from 250 to 450 degrees C. The low stress for low T-cure is a desirable property for film integration.

Item Type:	Article
Additional Information:	copyright for this article belongs to M/s Elsevier
Subjects:	Engineering > Electronics and Electrical Engineering Applied Physics/Condensed Matter Nanoscience/ Nanotechnology Optics
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	19 Aug 2026 10:55
Last Modified:	19 Aug 2026 10:55
URI:	https://npl.csircentral.net/id/eprint/3384

Actions (login required)

View Item