Jeyakumar, R. and Maiti, T. K. and Verma, Amit (2013) Influence of emitter bandgap on interdigitated point contact back heterojunction (a-Si:H/c-Si) solar cell performance. Solar Energy Materials and Solar Cells , 109. pp. 199-203. ISSN 0927-0248

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Abstract

We report on the theoretical investigation of a silicon-based interdigitated back contact back heterojunction (BHJ) solar cell that combines the advantages of heterojunction with intrinsic thin layer (HIT) solar cell and point contact back junction c-Si solar cell. Our results show an optimum bandgap for emitter (p-type a-Si:H) layer for this cell to be approximately 1.72 eV. As we increase the bandgap from 1.3 eV to 2.2 eV, the open circuit voltage (V-oc) increases from 0.45 V to 0.75 V and then saturates, while the short circuit current density (J(sc)) remains constant at 35 mA/cm(2) up to about 2.0 eV, and then decreases to zero. Fill factor (FF) increases from 57% to a maximum of 75% as the bandgap increases from 1.3 eV to similar to 1.72 eV, respectively, and then decrease to 5% when the bandgap reaches 2.1 eV. Efficiency increases from 7% and reaches a maximum of about 19% at around 1.7 eV and then decreases to zero at 2.1 eV. These results can be correlated to changes in valance band spike (barrier) when emitter bandgap increases from 1.3 eV to 2.2 eV, and are explained in terms of band alignment between p-a-Si:H/i-a-Si:H/n-type-c-Si.

Item Type:	Article
Additional Information:	copyright for this article belongs to M/s Elsevier
Subjects:	Energy Fuels Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	19 Aug 2026 09:45
Last Modified:	19 Aug 2026 09:45
URI:	https://npl.csircentral.net/id/eprint/3169

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