M. M. , Abdullah and G. , Bhagavannarayana and M. A. , Wahab (2010) Growth and characterization of GaSe single crystal. Journal of Crystal Growth, 312 (9). pp. 1534-1537. ISSN 0022-0248

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Abstract

A systematic study on structural and morphological properties of gallium selenide (GaSe) single crystals grown by vertical Bridgman technique is reported. A hexagonal structure of GaSe with lattice parameters a=b=3.74909 Å and c=15.90698 Å has been confirmed with the help of powder X-ray diffraction (XRD). Respective values of strain (3.43×10−4 lin−2 m−4) and dislocation density (1.35×1014 lin m−2) have been calculated using powder X-ray diffraction results. High resolution X-ray diffraction (HRXRD) has been performed to ascertain the crystalline perfection of the grown single crystal. The scanning electron microscopy (SEM) and powder X-ray diffraction results are in good agreement as far as the grain size of the grown gallium selenide (GaSe) crystal is concerned.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords:	A1. Crystal morphology; A1. High resolution X-ray diffraction; A1. X-ray diffraction; A2. Bridgman technique; A2. Single crystal growth; B2. Semiconducting gallium compounds
Subjects:	Crystallography Materials Science Physics
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	26 Apr 2012 11:45
Last Modified:	26 Apr 2012 11:45
URI:	http://npl.csircentral.net/id/eprint/176

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