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Pavunny, S. P. and Misra, P. and Thomas, R. and Kumar, A. and Schubert, J. and Scott, J. F. and Katiyar, R. S. (2013) Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness. Applied Physics Letters, 102 (192904). ISSN 0003-6951

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