Panigrahi, Jagannath and -, Vandana and Singh, Rajbir and Singh, P. K. (2018) Enhanced field effect passivation of c-Si surface via introduction of trap centers: Case of hafnium and aluminium oxide bilayer films deposited by thermal ALD. Solar Energy Materials and Solar Cells , 188. pp. 219-227. ISSN 0927-0248

Panigrahi, Jagannath and -, Vandana and Singh, Rajbir and Rauthan, C. M. S. and Singh, P. K. (2017) Crystalline silicon surface passivation by thermal ALD deposited Al doped ZnO thin films. AIP Advances, 7 (3). 035219-1-035219-7. ISSN 2158-3226

Panigrahi, Jagannath and Panwar, Vandana and Singh, Rajbir and Singh, P. K. (2017) Atomic layer deposited dielectric and/or semiconducting oxide bilayers for crystalline silicon surface passivation. In: Energy Procedia. Elsevier, 7th International Conference on Crystalline Silicon Photovoltaics (SiliconPV), 302-306. ISBN 1876-6102

Gope, Jhuma and -, Vandana and Batra, Neha and Panigrahi, Jagannath and Singh, Rajbir and Maurya, K. K. and Srivastava, Ritu and Singh, P. K. (2015) Silicon surface passivation using thin HfO2 films by atomic layer deposition. Applied Surface Science, 357. pp. 635-642. ISSN 0169-4332

Batra, Neha and Gope, Jhuma and -, Vandana and Panigrahi, Jagannath and Singh, Rajbir and Singh, P. K. (2015) Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation. AIP Advances, 5 (6). 067113-1-067113-10. ISSN 2158-3226

-, Vandana and Batra, Neha and Gope, Jhuma and Singh, Rajbir and Panigrahi, Jagannath and Tyagi, Sanjay and Pathi, P. and Srivastava, S. K. and Rauthan, C. M. S. and Singh, P. K. (2014) Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films. Physical Chemistry Chemical Physics, 16 (39). 21804-21811 . ISSN 1463-9076