Group by: Item Type | No Grouping Jump to: Article Number of items: 15. ArticleKrishna, Shibin and Aggarwal, Neha and Gundimeda, Abhiram and Sharma, Alka and Husale, Sudhi and Maurya, K. K. and Gupta, Govind (2019) Correlation of donor-acceptor pair emission on the performance of GaN-based UV photodetector. Materials Science in Semiconductor Processing, 98. 59-64. ISSN 1369-8001 Aggarwal, Neha and Krishna, Shibin and Jain, Shubhendra Kumar and Mishra, Monu and Maurya, K. K. and Singh, Sandeep and Kaur, Mandeep and Gupta, Govind (2019) Microstructural evolution of high quality AlN grown by PAMBE under different growth conditions. Materials Science and Engineering: B , 243. pp. 71-77. ISSN 0921-5107 Jain, Shubhendra Kumar and Mishra, Monu and Aggarwal, Neha and Krishna, Shibin and Gahtori, Bhasker and Pandey, Akhilesh and Gupta, Govind (2018) Influence of temperature and A1/N ratio on structural, chemical & electronic properties of epitaxial A1N films grown via PAMBE. Applied Surface Science, 455. pp. 919-923. ISSN 0169-4332 Jain, Shubhendra Kumar and Aggarwal, Neha and Krishna, Shibin and Kumar, Rahul and Husale, Sudhir and Gupta, Vinay and Gupta, Govind (2018) GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity. Journal of Materials Science: Materials in Electronics, 29 (11). pp. 8958-8963. ISSN 0957-4522 Mishra, Monu and Gundimeda, Abhiram and Krishna, Shibin and Aggarwal, Neha and Goswami, Lalit and Gahtori, Bhasker and Bhattacharyya, Biplab and Husale, Sudhir and Gupta, Govind (2018) Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors. ACS Omega, 3 (2). pp. 2304-2311. ISSN 2470-1343 Krishna, Shibin and Reddy, Anurag G. and Aggarwal, Neha and Kaur, Mandeep and Husale, Sudhir and Singh, Dinesh and Singh, Manju and Rakshit, Rajib and Maurya, K. K. and Gupta, Govind (2017) Enhanced current transport in GaN/AlN based single and double barrier heterostructures. Solar Energy Materials and Solar Cells , 170. pp. 160-166. ISSN 0927-0248 Gundimeda, Abhiram and Krishna, Shibin and Aggarwal, Neha and Sharma, Alka and Sharma, Nita Dilawar and Maurya, K. K. and Husale, Sudhir and Gupta, Govind (2017) Erratum: “Fabrication of non-polar GaN based highly responsive and fast UV photodetector” [Appl. Phys. Lett. 110, 103507 (2017)]. Applied Physics Letters, 111 (019901). ISSN 0003-6951 Mishra, Monu and Krishna, Shibin and Aggarwal, Neha and Gundimeda, Abhiram and Gupta, Govind (2017) Electronic structure and chemical state analysis of nanoflowers decorated GaN and AlGaN/GaN heterostructure. Journal of Alloys and Compounds, 708. pp. 385-391. ISSN 0925-8388 Mishra, Monu and Krishna, Shibin and Aggarwal, Neha and Gupta, Govind (2017) Influence of metallic surface states on electron affinity of epitaxial AlN films. Applied Surface Science, 407. pp. 255-259. ISSN 0169-4332 Aggarwal, Neha and Krishna, Shibin and Sharma, Alka and Goswami, Lalit and Kumar, Dinesh and Husale, Sudhir and Gupta, Govind (2017) A Highly Responsive Self-Driven UV Photodetector Using GaN Nanoflowers. Advanced Electronic Materials, 3 (5). 1700036-1-1700036-7. ISSN 2199-160X Mishra, Monu and Gundimeda, Abhiram and Krishna, Shibin and Aggarwal, Neha and Gahtori, Bhasker and Dilawar, Nita and Aggarwal, Ved Varun and Singh, Manju and Rakshit, Rajib and Gupta, Govind (2017) Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films. Physical Chemistry Chemical Physics, 9 (13). pp. 8787-8801. ISSN 1463-9076 Gundimeda, Abhiram and Krishna, Shibin and Aggarwal, Neha and Sharma, Alka and Sharma, Nita Dilawar and Maurya, K. K. and Husale, Sudhir and Gupta, Govind (2017) Fabrication of non-polar GaN based highly responsive and fast UV photodetector. Applied Physics Letters, 110 (103507). ISSN 0003-6951 Krishna, Shibin and Aggarwal, Neha and Mishra, Monu and Maurya, K. K. and Singh, Sandeep and Dilawar, Nita and Nagarajan, Subramaniyam and Gupta, Govind (2016) Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE. Physical Chemistry Chemical Physics, 18 (11). pp. 8005-8014. ISSN 1463-9076 Aggarwal, Neha and Krishna, Shibin and Mishra, Monu and Maurya, K. K. and Gupta, Govind (2016) Influence of active nitrogen species on surface and optical properties of epitaxial GaN films. Journal of Alloys and Compounds, 661. 461-465 . ISSN 0925-8388 Krishna, Shibin and Aggarwal, Neha and Mishra, Monu and Maurya, K. K. and Kaur, Mandeep and Sehgal, Geetanjali and Singh, Sukhveer and Dilawar, Nita and Gupta, Bipin Kumar and Gupta, Govind (2016) Epitaxial growth of high In-content In0.41Ga0.59N/GaN heterostructure on (11-20) Al2O3 substrate. Journal of Alloys and Compounds, 658. pp. 470-475. ISSN 0925-8388 |