Article

Gope, Jhuma and -, Vandana and Batra, Neha and Panigrahi, Jagannath and Singh, Rajbir and Maurya, K. K. and Srivastava, Ritu and Singh, P. K. (2015) Silicon surface passivation using thin HfO2 films by atomic layer deposition. Applied Surface Science, 357. pp. 635-642. ISSN 0169-4332

Juneja, Sucheta and Sudhakar, S. and Gope, Jhuma and Kumar, Sushil (2015) Mixed phase silicon thin films grown at high rate using 60 MHz assisted VHF-PECVD technique. Materials Science in Semiconductor Processing, 40. pp. 11-19. ISSN 1369-8001

Juneja, Sucheta and Sudhakar, S. and Gope, Jhuma and Lodhi, Kalpana and Sharma, Mansi and kumar, Sushil (2015) Highly conductive boron doped micro/nanocrystalline silicon thin films deposited by VHF-PECVD for solar cell applications. Journal of Alloys and Compounds, 643. pp. 94-99. ISSN 0925-8388

Batra, Neha and Gope, Jhuma and -, Vandana and Panigrahi, Jagannath and Singh, Rajbir and Singh, P. K. (2015) Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation. AIP Advances, 5 (6). 067113-1-067113-10. ISSN 2158-3226

-, Vandana and Batra, Neha and Gope, Jhuma and Singh, Rajbir and Panigrahi, Jagannath and Tyagi, Sanjay and Pathi, P. and Srivastava, S. K. and Rauthan, C. M. S. and Singh, P. K. (2014) Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films. Physical Chemistry Chemical Physics, 16 (39). 21804-21811 . ISSN 1463-9076

Gope, Jhuma and Kumar, Sushil and Sudhakar, S. and Lodhi, Kalpana and Rauthan, C. M. S. and Srivastava, P. C. (2013) Influence of argon dilution on the growth of amorphous to ultra nanocrystalline silicon films using VHF PECVD process. Journal of Alloys and Compounds, 577. pp. 710-716. ISSN 0925-8388

Gope, Jhuma and Kumar, Sushil and Singh, Sukhbir and Rauthan, C. M. S. and Srivastava, P. C. (2012) Growth of Mixed-Phase Amorphous and Ultra Nanocrystalline Silicon Thin Films in the Low Pressure Regime by a VHF PECVD Process. Silicon, 7 (2). pp. 127-135. ISSN 1876-990X

Parashar, A. and Kumar, Sushil and Gope, Jhuma and Rauthan, C.M.S. and Hashmi, S. A. and Dixit, P. N. (2010) RF power density dependent phase formation in hydrogenated silicon films. Journal of Non-Crystalline Solids, 356 (35-36). pp. 1774-1778. ISSN 0022-3093

Kumar, Sushil and Gope, Jhuma and Kumar, Aravind and Parashar, A. and Rauthan, C. M. S. and Dixit, P. N. (2008) High Pressure Growth of Nanocrystalline Silicon Films. Journal of Nanoscience and Nanotechnology , 8 (8). pp. 4211-4217. ISSN 1533-4880

Parashar, A. and Kumar, Sushil and Dixit, P. N. and Gope, Jhuma and Rauthan, C. M. S. and Hashmi, S. A. (2008) High-pressure condition of SiH4+Ar+H2 plasma for deposition of hydrogenated nanocrystalline silicon film. Solar Energy Materials & Solar Cells, 92. pp. 1199-1204. ISSN 0927-0248

Gope, Jhuma and Kumar, Sushil and Parashar, A. and Dixit, P. N. and Rauthan, C. M. S. and Panwar, O. S. and Patel, D. N. and Agarwal, S. C. (2009) Amorphous and nanocrystalline silicon made by varying deposition pressure in PECVD process. Journal of Non-Crystalline Solids, 355 (45-47). pp. 2228-2232. ISSN 0022-3093

De, Shounak and Gope, Jhuma and Satyanarayana, B. S. and Panwar, O. S. and Rao, Mohan (2010) DETERMINATION OF DENSITY-OF-STATES OF NANOCLUSTER CARBON THIN FILMS MIS STRUCTURE USING CAPACITANCE–VOLTAGE TECHNIQUE. Modern Physics Letters B , 25 (10). 763-772. ISSN 1793-6640

Kumar, Sushil and Dixit, P. N. and Rauthan, C. M. S. and Parashar , A . and Gope, Jhuma (2008) Effect of power on the growth of nanocrystalline silicon films. Journal Of Physics: Condensed Matter, 20 (33). 335215-1-335215-7. ISSN 0953-8984

Conference or Workshop Item

-, Vandana and Batra, Neha and Gope, Jhuma and Rauthan, CMS and Sharma, Mukul and Srivastava, Ritu and Srivastava, S. K. and Pathi, P. and Singh, P. K. (2014) Silicon Surface Passivation by Al2O3 film using Atomic Layer Deposition. In: 17th International Workshop on the Physics of Semiconductor Devices (IWPSD) , DEC 10-14, 2013, Noida, INDIA .