Khan, Firoz and Singh, S. N. and Husain , M. (2011) Determination of the diode parameters of a-Si and CdTe solar modules using variation of the intensity of illumination: An application. Solar Energy Materials and Solar Cells , 85 (9). 2288-2294. ISSN 0927-0248

PDF - Published Version Restricted to Registered users only Download (751Kb) | Request a copy

Abstract

An attempt has been made for the determination of diode parameters viz. shunt resistance Rsh, series resistance Rs, diode ideality factor n and reverse saturation current density J0 of three solar modules: a-Si 47-37, a-Si 51-13 and CdTe 14407. In this regard, two approaches namely (A) and (B) reported by Khan et al. (2010) have been used to determine all the four diode parameters Rsh, Rs, n and J0. The data of slopes of J–V curve at open circuit conditions (moc) and open circuit voltage (Voc) at different illumination intensities obtained by Del Cueto (1998) for two a-Si and one CdTe solar modules have been used to determine the above diode parameters. The determined values of diode parameters have been used to generate the theoretical J–V curves. The theoretical fill factor (FF) and Voc have been calculated from the theoretical J–V curves and are plotted along with the experimental FF and Voc values. The theoretical values of FF and Voc obtained by the approach (B) of method of Khan et al. (2010) are in good agreement with the experimental values.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords:	a-Si solar modules; CdTe solar modules; Series resistance; Shunt resistance; Diode ideality factor; Reverse saturation current density
Subjects:	Energy Fuels
Divisions:	UNSPECIFIED
Depositing User:	Mr. Abhishek Yadav
Date Deposited:	27 Nov 2012 09:50
Last Modified:	27 Nov 2012 09:50
URI:	http://npl.csircentral.net/id/eprint/848

Actions (login required)

View Item