Rana, Omwati and Srivastava, Ritu and Grover, Rakhi and M. , Zulfequar and M. , Husain and Kamalasanan, M. N. (2011) Charge transport studies in thermally evaporated 2,2′,7,7′-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9′-spirobifluorene (spiro-MeOTAD) thin film. Synthetic Metals, 161 (9-10). pp. 828-832. ISSN 0379-6779

[img] PDF - Published Version
Restricted to Registered users only

Download (798Kb) | Request a copy


Charge transport mechanism in 2,2′,7,7′-tetrakis-(N,N-di-4-methoxyphenyl amino)-9,9′-spirobifluorene (spiro-MeOTAD) has been investigated as a function of temperature and organic layer thicknesses. Hole only devices of different thicknesses were fabricated in configuration ITO/spiro-MeOTAD/Au by vacuum evaporation technique. The hole current is space charge limited which provides a direct measurement of the hole mobility μ as a function of electric field and temperature. Gaussian disorder model has been used to explain the temperature and field dependent behavior of mobility. The values of energetic disorder (σ = 0.088 eV), positional disorder (Σ = 3.35) and mobility prefactor (μ0 = 0.0147 cm2/V s) have been evaluated using this model.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords: Charge transport; SCLC; Hole mobility; Gaussian disorder model
Subjects: Materials Science
Applied Physics/Condensed Matter
Polymer Science
Depositing User: Mr. Abhishek Yadav
Date Deposited: 08 Nov 2012 08:50
Last Modified: 08 Nov 2012 08:50
URI: http://npl.csircentral.net/id/eprint/811

Actions (login required)

View Item View Item