Reshak, Ali Hussain and Kamarudin, H. and Auluck, S. (2011) Bismuth-containing semiconductors: Linear and nonlinear optical susceptibilities of GaAs1−x Bix alloys. Journal of Alloys and Compounds, 509 (40). 9685-9691. ISSN 0925-8388

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Abstract

Using all electron full potential – linearized augmented plane wave (FP-LAPW) method the linear and nonlinear optical susceptibilities of cubic GaAs1−xBix alloys with x varying between 0.25 and 0.75 with increment of 0.25 are investigated. We have applied the generalized gradient approximation (GGA) for the exchange and correlation potential. In addition the Engel–Vosko generalized gradient approximation (EVGGA) was used. The reflectivity, refractivity, absorption coefficient and the loss function of these ternary alloys were investigated. The absorption coefficient shows that GaAs0.25Bi0.75 possess the highest coefficient among the investigated alloys which supports our previous observation that the band gap decreases substantially with increasing Bi content and the materials with very small energy band gap possess the highest absorption coefficient. The investigation of the linear and nonlinear optical susceptibilities of GaAs1−xBix shows a strong band gap reduction as commonly found experimentally.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords:	GaAs1-xBix alloys; Optical properties (linear and nonlinear); DFT; FP-LAPW
Subjects:	Chemistry Materials Science Metallurgy & Metallurgical Engineering
Divisions:	UNSPECIFIED
Depositing User:	Mr. Abhishek Yadav
Date Deposited:	06 Nov 2012 12:15
Last Modified:	06 Nov 2012 12:15
URI:	http://npl.csircentral.net/id/eprint/800

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