Khan, Firoz and Singh, S. N. and Husain, M (2009) Determination of diode parameters of a silicon solar cell from variation of slopes of the I–V curve at open circuit and short circuit conditions with the intensity of illumination. Semiconductor Science and Technology, 25 (1). pp. 1-8. ISSN 0268-1242

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Abstract

An analytical method of determination of all the four diode parameters of the single exponential model of a silicon solar cell, namely shunt resistance Rsh, series resistance Rs ,diode ideality factor n and reverse saturation current I0 from the variation of slopes of the I–V curve of the cell near short circuit and open circuit conditions with intensity of illumination in a small range of intensity, is presented for the first time. In a suitable range of intensity the variation of dI/dV at short circuit enables determination of Rsh, whereas the variation of dI/dV at open circuit enables determination of Rs , n and I0. The diode parameters of a silicon solar cell were determined with this method using I–V characteristics of the cell in 40–125 mW cm−2 intensity range of a simulated AM1.5 solar radiation. Theoretical I–V curves generated using so determined values of the diode parameters matched well with the experimental I–V curves of the cell obtained under various intensities of illumination in the above range.

Item Type:	Article
Subjects:	Engineering Materials Science Physics
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	30 Mar 2012 11:45
Last Modified:	30 Mar 2012 11:45
URI:	http://npl.csircentral.net/id/eprint/77

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