Abdullah, M. M. and Khan, Ajmal and Bhagavannarayana, G. and Wahab, M. A. (2011) Structural and Dielectric Studies of Pure and Mn Doped GaSe. Science of Advanced Materials, 3 (2). pp. 239-244. ISSN 1947-2935

[img] PDF - Published Version
Restricted to Registered users only

Download (703Kb) | Request a copy


A comprehensive study on the synthesis and characterization of pure and manganese (Mn) doped gallium selenide (GaSe) has been reported in this paper. Synthesis of pure and manganese doped gallium selenide from component elements was carried out in transparent and fused quartz ampoules, with the help of a rocking furnace. X-ray diffractometry study revealed that the doping of manganese with gallium selenide does affect the morphology to a certain extent but not the crystal structure of gallium selenide (GaSe). It has been found that the preferential orientation of the crystalline grains are along the [001] direction. Respective values of crystallite size, strain and dislocation density have been calculated using powder X-ray diffraction results. The value of dielectric constant of doped specimen is higher at lower frequencies and decreases with increasing the frequency. The low value of dielectric loss suggests that the material possess enhanced optical quality with lesser defects.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s American Scientific Publishers.
Uncontrolled Keywords: Chalcogenides; X-Ray Diffraction; Semiconductivity; Dielectric Properties
Subjects: Materials Science
Applied Physics/Condensed Matter
Nanoscience/ Nanotechnology
Depositing User: Mr. Abhishek Yadav
Date Deposited: 19 Oct 2012 08:02
Last Modified: 19 Oct 2012 08:02
URI: http://npl.csircentral.net/id/eprint/732

Actions (login required)

View Item View Item