Vizhi, R. Ezhil and Kumar, R. Ashok and Babu, D. Rajan and Sathiyanarayanan, K. and Bhagavannarayana, G. (2010) Synthesis, Crystal Growth, Structural, Dielectric and Ferroelectric Properties of N-Acetyl Glycine Phosphite (AGPI) Single Crystals. Ferroelectrics , 413 (1). pp. 291-300. ISSN 0015-0193

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Abstract

Single crystals of N-Acetyl Glycine Phosphite (AGPI) were grown from aqueous solution by low temperature solution growth technique. Formation of the new crystal has been confirmed by single crystal XRD studies. AGPI belongs to monoclinic system with cell parameters a = 7.419 Å, b = 8.487 Å, c = 9.791 Å. Crystalline quality was found using rocking curve. The presence of functional groups were estimated qualitatively by FTIR analysis. The dielectric studies were carried out to identify the phase transition temperature and to find the dielectric constant. Hysteresis studies were carried out to identify the ferroelectric nature of the material. AFM studies were carried out to understand the ferroelectric surface and the domain structure.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Taylor & Francis Group.
Uncontrolled Keywords:	Crystal growth; AGPI crystal; SXRD; HRXRD; Ferroelectric materials
Subjects:	Materials Science Physics
Divisions:	UNSPECIFIED
Depositing User:	Mr. Abhishek Yadav
Date Deposited:	11 Oct 2012 12:14
Last Modified:	11 Oct 2012 12:14
URI:	http://npl.csircentral.net/id/eprint/674

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