Rodríguez-Fernández, J. and Carcelen, V. and Hidalgo, P. and Vijayan, N. and Piqueras, J. and Sochinskii, N. V. and Pérez, J. M. and Diéguez, E. (2009) Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals. Journal of Applied Physics, 106 (4). 044901-1. ISSN 1089-7550

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Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.

Item Type: Article
Subjects: Physics
Depositing User: Ms Neetu Chandra
Date Deposited: 28 Sep 2012 08:10
Last Modified: 28 Sep 2012 08:10

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