Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals

Rodríguez-Fernández, J. and Carcelen, V. and Hidalgo, P. and Vijayan, N. and Piqueras, J. and Sochinskii, N. V. and Pérez, J. M. and Diéguez, E. (2009) Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals. Journal of Applied Physics, 106 (4). 044901-1. ISSN 1089-7550

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Official URL: http://dx.doi.org/10.1063/1.3197031

Abstract

Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.

Item Type:	Article
Subjects:	Physics
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	28 Sep 2012 08:10
Last Modified:	28 Sep 2012 08:10
URI:	http://npl.csircentral.net/id/eprint/628

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