Rastogi, A. C. and Sharma, R. K. (2008) Properties and mechanism of solar absorber CdTe thin film synthesis by unipolar galvanic pulsed electrodeposition. Journal of Applied Electrochemistry , 39 (2). pp. 167-176. ISSN 1572-8838

PDF - Published Version Restricted to Registered users only Download (675Kb) | Request a copy

Abstract

Electrochemical deposition of CdTe semiconductor thin films over transparent conducting glass substrates by sequential unipolar current pulses is described. The magnitude of pulsed current and pulse periodicity affects the crystalline structure, morphology, optical absorbance and composition of CdTe films. CdTe films formed under high magnitude pulsed current density ~5–15 mA cm−2 are crystalline with dominant cubic structure having (111) plane oriented parallel to the substrate. Stoichiometric CdTe film growth occurs with current pulses of short 25–300 ms periodicity and 3–50 ms duration. A mechanism of the CdTe growth involving in situ cathodic tellurization process step involving H2Te formation and reaction with electrochemically deposited Cd monolayer is described. CdTe film growth in the pulsed electrodeposition occurs under mass transport conditions under strong influence of high magnitude pulsed current. This results in much higher growth rates ~5–8 μm h−1 for CdTe films which is attractive for CdTe solar cells in a production environment.

Item Type:	Article
Uncontrolled Keywords:	Pulsed electrodeposition; CdTe thin films; Optical absorption; CdTe solar cells; Tellurization
Subjects:	Electrochemistry
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	27 Sep 2012 12:48
Last Modified:	27 Sep 2012 12:48
URI:	http://npl.csircentral.net/id/eprint/622

Actions (login required)

View Item