-, Govind and Kumar, Praveen and Shivaprasad, S. M. (2009) Phase dependence of secondary electron emission at the Cs-Sb-Si (111) interface. In: International Conference on Transport and Optical Properties of Nanomaterials (ICTOPON 2009) , JAN 05-08, 2009 , Allahabad, INDIA.

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The multi-alkali antimonides adsorption on Si (111) surface has drawn much attention of several surface science studies due to its importance in both, fundamental and technological aspects of night vision devices & photocathodes. We report the formation of alkali metal antimonide ternary interface on Si(111)-7x7 surface and in-situ characterization by X-ray Photoelectron Spectroscopy (XPS). The results show that Cs adsorption on clean Si(111) surface follows the layer-by-layer (Frank van der Merwe) growth mode at low flux rate, while Sb grows as islands (Volmer-Weber) on Cs/Si surface. The changes in the Si (2p) and Cs (3d) core level spectra show the formation of a ternary interface (Sb/Cs/Si) at room temperature, which is further confirmed by changes in the density of states in the valence band spectra. The temperature controlled desorption of ternary interface, by monitoring the chemical species remnant on the surface after annealing at different temperatures, reveal that the Sb islands desorb at < 550 degrees C while Cs monolayer desorbs at temperatures > 750 degrees C, which implies a stronger Cs-Si bond to Cs-Sb bond. The work function changes from 3.9 eV to 0.8 eV for Cs adsorption on Si, which further reduces to 0.65eV after Sb adsorption on the Cs/Si interface. The changes in work function corresponds to the compositional and chemical nature of the interface and thus indicate that the secondary electron emission is an extremely phase dependent phenomena.

Item Type: Conference or Workshop Item (Paper)
Subjects: Optics
Depositing User: Ms Neetu Chandra
Date Deposited: 24 Sep 2012 07:21
Last Modified: 24 Sep 2012 07:21
URI: http://npl.csircentral.net/id/eprint/596

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