Carcelen, V. and Vijayan, N. and J. , Rodrıguez-Fernandez and Hidalgo, P. and Piqueras, J. and Sochinskii, N. V. and Pérez, J. M. and Diéguez, E. (2009) Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals. Journal of Crystal Growth, 311 (5). pp. 1264-1267. ISSN 0022-0248

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Abstract

The II–VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) oscillatory Bridgman technique, (ii) from vapour phase using pyrolytic boron nitride ampoule in the Bridgman geometry, and (iii) by using a Pt tube used for the ampoule support as a cold finger. Several improvements were found in the thermal environments such as the effects of superheating and reduced growth velocity, as well as improvements in the grain size and zinc composition along the ingot. The compositional homogeneity and its current–voltage characteristic behaviour have been analysed using energy dispersive X-ray analysis and I–V method, respectively.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords:	A1. Characterization; A2. Bridgman technique; A2. Growth from melt; A2. Growth from vapour; B2. semiconducting II–VI materials
Subjects:	Crystallography Materials Science Physics
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	04 Sep 2012 11:43
Last Modified:	04 Sep 2012 11:43
URI:	http://npl.csircentral.net/id/eprint/541

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