Karar, N. and Opila, R. and Beebe Jr., T. and Toader, O. and Naab, F. (2012) TOF-SIMS Analysis of InGaN/GaN for Expected Doping Profiles. ECS Journal of Solid State Science and Technology, 1 (4). P164-P168 . ISSN 2162-8777

[img] PDF - Published Version
Restricted to Registered users only

Download (1544Kb) | Request a copy


Analysis of the expected concentration of n and p dopants with depth (the doping gradient) and its comparison with actual carrier concentration helps in getting a usable semiconductor device. In GaN devices, Al2O3 is usually the substrate and InGaN is the working layer with Si acting as n type and Mg as p type dopants. In this work we present an analysis of how Si and Mg doping profiles, and inadvertent trace impurities in InGaN/GaN/Al2O3 may be used for better p-n and p-i-n device performance. Time of Flight Secondary Ion Spectrometry (TOF-SIMS) and associated quantitative analysis were utilized for this. A relation between observed carrier concentration and estimated doping profile was observed. Diffusion of the dopants across the expected junctions was also observed. Such information leads to effective usage of obtained InGaN/GaN structures for possible device formation.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s The Electrochemical Society.
Subjects: Chemistry
Depositing User: Ms Neetu Chandra
Date Deposited: 30 Aug 2012 12:31
Last Modified: 30 Aug 2012 12:31
URI: http://npl.csircentral.net/id/eprint/511

Actions (login required)

View Item View Item