Kumar, Rajesh and Khare, Neeraj and Kumar, Vijay and Bhalla, G. L. and Srivastava, Ritu and Chauhan, Gayatri and Kamalasanan, M. N. (2009) Fabrication and current–voltage characteristics of ZnO/α NPD based inorganic–organic hybrid structure. Semiconductor Science and Technology, 24 (4). 045020-1-045020-3. ISSN 0268-1242

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Abstract

A transparent inorganic–organic semiconductor heterojunction has been fabricated using a N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'biphenyl-4,4diamine (α-NPD) small molecule p-type organic material and n-ZnO. The p-type α-NPD has been deposited by high vacuum resistive thermal evaporation technique on a sputter-deposited ZnO film. The device shows diode-like characteristics with a rectification ratio of ~2. The α-NPD/ZnO interface was modified by introducing a self-assembled monolayer of 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyano- quinodimethane (F4-TCNQ) on the ZnO surface before the deposition of α-NPD. This improves the rectification ratio of the device almost by 100 times. The introduction of the F4-TCNQ layer changes the ideality factor from 8.7 to 3.1 and the estimated barrier height value from 0.939 eV to 0.802 eV.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s IOP PUBLISHING.
Subjects:	Engineering Materials Science Physics
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	29 Aug 2012 08:38
Last Modified:	29 Aug 2012 08:38
URI:	http://npl.csircentral.net/id/eprint/502

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