Kumar, Praveen and Kumar, Mahesh and Shivaprasad, S. M. (2010) (7X7) reconstruction as barrier for Schottky-barrier formation at the Ga/Si (111) interface. Applied Physics Letters, 97 (12). ISSN 1077-3118

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We report the change in electronic properties of the Ga/Si interface by monitoring the Ga(3d) core-level photoelectron spectra and electron diffraction induced by submonolayer Ga adsorption on Si(111)-7X7 surface. The spectra shows a flat band for submonolayer coverages, attributed to the metallic nature of the Si(111)-7X7 reconstruction and a premetallic band structure of two-dimensional Ga islands. At 1 ML, electron diffraction pattern shows metallic (7X7) to semiconducting (1X1) phase-transition and the spin-orbit split branching ratio of Ga (2p) core level attain the metallic bulk value, and the barrier assumes the Schottky–Mott value while full width half maxima and branching ratio attain bulk values. © 2010 American Institute of Physics.

Item Type: Article
Subjects: Applied Physics/Condensed Matter > Superconductivity
Applied Physics/Condensed Matter > Ferroelectrics and Semiconductors
Applied Physics/Condensed Matter
Depositing User: Ms Neetu Chandra
Date Deposited: 30 Dec 2011 11:51
Last Modified: 02 Jan 2012 12:15
URI: http://npl.csircentral.net/id/eprint/5

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