Kumar, Praveen and Nair, Lekha and Bera, Santanu and Mehta , B. R. and Shivaprasad , S. M. (2009) Epitaxial SiC formation induced by medium energy ions on Si(1 1 1) at room temperature. Applied Surface Science, 255 (15). 6802-6805. ISSN 0169-4332

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In the search for silicon technology compatible substrate for III-nitride epitaxy, we present a proof-of-concept for forming epitaxial SiC layer on Si(1 1 1). A C/Si interface formed by ion sputtering is exposed to 100–1500 eV Ar+ ions, inducing a chemical reaction to form SiC, as observed by core-level X-ray photoelectron spectroscopy (XPS). Angle dependent XPS studies shows forward scattering feature that manifest the epitaxial SiC layer formation, while the valence band depicts the metal to insulator phase change.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords: X-ray photoelectron spectroscopy; Silicon carbide; Ion beam induced reactions; Reaction threshold
Subjects: Chemistry
Materials Science
Depositing User: Ms Neetu Chandra
Date Deposited: 28 Aug 2012 07:52
Last Modified: 28 Aug 2012 07:52
URI: http://npl.csircentral.net/id/eprint/494

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