Gour, Kuldeep Singh and Karade, Vijay and Pandey, Animesh and Kumar, Manoj and Bhattacharyya, Biplab and Babar, Pravin and Lee, Dong Min and Husale, Sudhir and Singh, Vidya Nand and Kim, Jin Hyeok (2020) High-speed, low-bias operated, broadband (Vis-NIR) photodetector based on sputtered Cu2ZnSn(S, Se)(4) (CZTSSe) thin films. Sensors and Actuators A: Physical, 314. pp. 112231-112240. ISSN 0924-4247

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Abstract

Photodetectors have large applications in the current ongoing pandemic. These can be used to study the growth of viruses where depending upon the concentration the light intensity will be reduced. Since the viruses grow very fast therefore a device with very low response time as well as quick recovery will be useful for this study. If the device can be made from the non-toxic materials and sizes are quite small, they can be used for in vitro studies as well. Kesterite Cu2ZnSn(5, Se)(4) (CZTSSe) thin film can be deposited over flexible substrates. The detectivity of even very small area device is very high with ultra-small response and recovery time. The CZTSSe PD exhibited excellent broadband (Vis-NIR) photoresponse, high responsivity of 18.0 mA.W-1, a fast rise time of 82 ms, and a decay time of 97 ms, as well as high detectivity (similar to 10(9) Jones) with favorable self-powered characteristics. This work suggests significant scientific insights for photoconductivity properties of emerging kesterite CZTSSe thin-film materials for broadband, low-cost, high-efficiency next-generation thin-film photodetectors for various optoelectronic applications including diagnostic.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Engineering Engineering > Electronics and Electrical Engineering Instruments/ Instrumentation
Divisions:	UNSPECIFIED
Depositing User:	Mr. Yogesh Joshi
Date Deposited:	30 Mar 2022 11:03
Last Modified:	30 Mar 2022 11:03
URI:	http://npl.csircentral.net/id/eprint/4746

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