Goswami, Lalit and Aggarwal, Neha and Verma, Rajni and Bishnoi, Swati and Husale, Sudhir and Pandey, Rajeshwari and Gupta, Govind (2020) Graphene Quantum Dot-Sensitized ZnO-Nanorod/GaN-Nanotower Heterostructure-Based High-Performance UV Photodetectors. ACS Applied Materials and Interfaces, 12 (41). pp. 47038-47047. ISSN 1944-8244

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Abstract

The fabrication of a superior-performance ultraviolet (UV) photodetector utilizing graphene quantum dots (GQDs) as a sensitization agent on a ZnO-nanorod/GaN-nanotower heterostructure has been (;QDs realized. GQD sensitization displays substantial impact on the electrical as well as the optical performance of a heterojunction UV photodetector. The GQD sensitization stimulates charge carriers in both ZnO and GaN and allows energy band alignment, which is realized by a spontaneous time-correlated transient response. The fabricated device demonstrates an excellent responsivity of 3.2 x 10(3) A/W at -6 V and displays an enhancement of similar to 265% compared to its bare counterpart. In addition, the fabricated heterostructure UV photodetector exhibits a very high external quantum efficiency of 1.2 X 10(6)%, better switching speed, and signal detection capability as low as similar to 50 fW.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s American Chemical Society.
Subjects:	Multidisciplinary Materials Science Nanoscience/ Nanotechnology
Divisions:	UNSPECIFIED
Depositing User:	Mr. Yogesh Joshi
Date Deposited:	30 Mar 2022 11:22
Last Modified:	30 Mar 2022 11:22
URI:	http://npl.csircentral.net/id/eprint/4740

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