Kumar, Pankaj and Jain, S. C. and Kumar, Vikram and Chanda, Suresh and Tandon, R. P. (2008) Effect of non-zero Schottky barrier on the J-V characteristics of organic diodes. European Physical Journal E , 28 (4). pp. 361-368. ISSN 1292-895X

[img] PDF - Published Version
Restricted to Registered users only

Download (682Kb) | Request a copy


Current-voltage (J-V) characteristics of poly(3-hexylthiophene) (P3HT) are studied at different temperatures upto high voltages similar to 20 V in the hole- only device configuration. The characteristics are studied in the temperature range 310-210 K. In the intermediate voltage range the J-V characteristics follow J proportional to Vl+1, where l > 1. As the voltage increases to high values J still varies as a power law i.e. as V-m, but contrary to the literature result m becomes < 2. This behavior is explained theoretically in terms of non-zero injection Schottky barriers. The complete analytical expressions for the actual trap filled limit voltage (V-TFL') and J-V curves beyond V-TFL' are presented.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s EDP Sciences and Springer Verlag
Subjects: Chemistry
Materials Science
Polymer Science
Depositing User: Ms Neetu Chandra
Date Deposited: 23 Aug 2012 09:23
Last Modified: 23 Aug 2012 09:23
URI: http://npl.csircentral.net/id/eprint/468

Actions (login required)

View Item View Item