Shankar, Uday and Gupta, Chaitanya R. and Oberoi, Deepa and Singh, Bhanu P. and Kumar, Ashok and Bandyopadhyay, Anasuya (2020) A facile way to synthesize an intrinsically ultraviolet-C resistant tough semiconducting polymeric glass for organic optoelectronic device application. Carbon, 168. pp. 485-498. ISSN 0008-6223
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Abstract
In this investigation, we have developed a new semiconductive Polymeric Transparent Matrix (PTM) as a substitute to the glass substrate used in a conventional optoelectronic device. Initially, we have synthesized Poly(methyl methacrylate) (PMMA) and series of its copolymers with Styrene in different weight percent (wt.%) ratio via solution polymerization process. The obtained polymers were characterized using various techniques to understand the effect of introducing different proportions of Styrene comonomers on PMMA backbone. The optimum composition of PTM was chosen based on copolymer's mechanical properties, optical transparency, and ultraviolet (UV) shielding properties. Then, a series of nanocomposites consisting of optimized PTM and various wt.% of Multiwalled Carbon Nanotubes (MWCNT) as a conductive filler were fabricated to increase the conductivity of PTM. A steep increase (10(9) fold) in bulk electrical conductivity was observed in case of 0.25 wt% MWCNT loaded optimized composite matrix, along with the retention of a good amount of optical transparency (88% at 550 nm) and 100% UV-C shielding. This optimized nanocomposite has also shown amelioration in mechanical properties as a result of uniform dispersion of MWCNT. These remarkable attributes favor the use of this optimized semiconducting PTM as a potential transparent substrate for next-generation organic optoelectronic devices.
Item Type: | Article |
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Additional Information: | Copyright for this article belongs to M/s Elsevier. |
Subjects: | Chemistry > Physical Chemistry Materials Science |
Divisions: | UNSPECIFIED |
Depositing User: | Mr. Yogesh Joshi |
Date Deposited: | 09 Nov 2021 11:21 |
Last Modified: | 09 Nov 2021 11:21 |
URI: | http://npl.csircentral.net/id/eprint/4555 |
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