Deswal, Sweety and Malode, Rupali R. and Kumar, Ashok and Kumar, Ajeet
(2019)
Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory.
RSC Advances , 9 (17).
pp. 9494-9499.
ISSN 2046-2069
Abstract
A detailed understanding of quantization conductance (QC), the correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we demonstrate highly stable and reproducible quantized conductance states (QC-states) in Al/niobium oxide/Pt resistive switching devices. Three levels of control over the QC-states, required for multilevel quantized state memories, like, switching ON to different quantized states, switching OFF from quantized states, and controlled inter-state switching among one QC state to another has been demonstrated by imposing limiting conditions of stop-voltage and current compliance. The well-defined multiple QC states along with a working principle for switching among various states show promise for implementation of multilevel memory devices.
| Item Type: |
Article
|
| Additional Information: |
Copyright for this article belongs to M/s Royal Society of Chemistry. |
| Subjects: |
Chemistry |
| Divisions: |
UNSPECIFIED |
| Depositing User: |
Mr. Yogesh Joshi
|
| Date Deposited: |
04 Feb 2020 11:49 |
| Last Modified: |
04 Feb 2020 11:49 |
| URI: |
http://npl.csircentral.net/id/eprint/4134 |
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