Agrawal, Kalpana and Srivastava, Ritu and Rajput, S. S. (2019) Analysing the TIPSP-based VOFET through transistor efficiency (g(m)/I-D). IET Circuits, Devices and Systems, 13 (2). pp. 139-144. ISSN 1751-858X

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Abstract

A simple vertical organic field-effect transistor (VOFET) structure has been fabricated using ambipolar 6, 13-bis (triisopropylsilyl ethynyl) pentacene (TIPSP) with a channel length (L) of 90 nm. This device can operate at -2 V which is much lower than the voltage, reported so far for the organic devices based on TIPSP. The first time, the authors are using transistor efficiency to extract VOFET's parameters. The threshold voltage (V-th) of the device has been found to vary between 0.18 and 0.38 V with the current on/off ratio (I-on/I-off) of 10(4). The mobility (mu) of the device has been calculated as 0.62 cm(2)/Vs. The sub-threshold slope, transconductance (g(m)), output conductance (g(d)), and early voltage (V-E) have been found to be 140 +/- 30 mV/decade, 2 mu S, 10(-6) S, and 1.3 +/- 2 V, respectively.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Institution of Engineering and Technology.
Subjects:	Engineering > Electronics and Electrical Engineering
Divisions:	UNSPECIFIED
Depositing User:	Mr. Yogesh Joshi
Date Deposited:	29 Jan 2020 11:37
Last Modified:	29 Jan 2020 11:37
URI:	http://npl.csircentral.net/id/eprint/4101

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