Verma, Ritu and Suman, C. K. and Srivastava, Ritu (2018) WO3-doped LiF as gate dielectric for p-channel vertical organic field effect transistor application. Thin Solid Films, 666. pp. 156-160. ISSN 0040-6090

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Abstract

We report low voltage operable p-channel vertical organic field effect transistors (VOFETs) using 5,5'""-Dihexyl-2,2':5',2 '':5 '',2'":5'",2"":5'"',2'""-sexithiophene (DH6T) as organic semiconductor and tungsten trioxide (WO3) doped lithium fluoride (LiF) nano-composite of various concentrations as high-k dielectric. Among the various doping concentrations of WO3, the 5 wt% WO3-doped LiF shows the best performance. The gate leakage was effectively reduced from 10(-4) A/cm(2) order to 10(-6) A/cm(2) by the addition of 5 wt% WO3-doped LiF as compare to 0 wt% WO3-doped LiF, resulted in higher drain current for this device. The best values of threshold voltage, mobility, on/off ratio, trans-conductance and sub-threshold slope for the devices made were estimated to be 0.85 V, 0.034 cm(2)/Vs, 10(5), 60 mu S and 0.32 V/decade respectively.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Mr. Yogesh Joshi
Date Deposited:	27 Mar 2019 11:28
Last Modified:	27 Mar 2019 11:28
URI:	http://npl.csircentral.net/id/eprint/4038

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