Thakre, Atul and Kumar, Ashok (2018) Unipolar resistive switching in sol-gel synthesized strontium titanate thin films. Vacuum, 151. pp. 182-184. ISSN 0042-207X

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Abstract

We report repeatable and robust unipolar resistive switching (URS) in strontium titanate (SrTiO3 similar to STO) thin films fabricated on conducting ITO coated glass substrate. The Atomic Force Microscopy (AFM) image of the top surface of the films suggests very smooth surface over a large area. The conduction mechanisms responsible for the resistive switching phenomenon were also thoroughly analyzed by current-voltage and impedance spectroscopy analysis. Frequency-dependent various impedance parameters were analyzed for each resistive states (high resistance state (HRS) and low resistive state (LRS)). The oxygen vacancies may be one of the dominating factors for robust URS phenomenon in the device. The presented Au/STO/ITO memory devices have exhibited long retention characteristics of >10(4) s and OFF/ON resistance ratio of >10(3) with a distinguishable SET and RESET voltage window of similar to 1 V.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Mr. Yogesh Joshi
Date Deposited:	14 Mar 2019 10:35
Last Modified:	14 Mar 2019 10:35
URI:	http://npl.csircentral.net/id/eprint/4014

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