Panigrahi, Jagannath and -, Vandana and Singh, Rajbir and Singh, P. K. (2018) Enhanced field effect passivation of c-Si surface via introduction of trap centers: Case of hafnium and aluminium oxide bilayer films deposited by thermal ALD. Solar Energy Materials and Solar Cells , 188. pp. 219-227. ISSN 0927-0248

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Abstract

Field effect passivation of crystalline silicon surface is controlled by tailoring the built-in charge in a bilayer dielectric system consisting of hafnium oxide (HfO2) and aluminium oxide (Al2O3). The effective surface recombination velocity (S-eff, (max)) similar to 10 cm/s is achieved at intermediate bulk injection levels with thermal ALD deposited HfO2 (top)/Al2O3 (bottom) bilayer system on n-type silicon with individual layer thickness between 3 and 7 nm. The best realized Seffme, value is lower by a factor of similar to 2.5 with respect to the single Al2O3 layer of similar thickness deposited under the same experimental conditions. The improved field effect passivation is quantified by enhanced effective charge density for the bilayer system in comparison with the corresponding value for single Al2O3 layer. The introduction of extra trap centers at the interface of the bilayer system is primarily responsible for the enriched field effect passivation, however, the sequence of the dielectric layers is important.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Energy Fuels Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Mr. Yogesh Joshi
Date Deposited:	22 Aug 2019 11:29
Last Modified:	22 Aug 2019 11:29
URI:	http://npl.csircentral.net/id/eprint/3980

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