Bohra, Anil K. and Bhatt, Ranu and Singh, Ajay and Bhattacharya, Shovit and Basu, Ranita and Meshram, K. N. and Sarkar, Shaibal K. and Bhatt, Pramod and Patro, P. K. and Aswal, D. K. and Muthe, K. P. and Gadkari, S. C. (2018) Transition from n- to p-type conduction concomitant with enhancement of figure-of-merit in Pb doped bismuth telluride: Material to device development. Materials and Design, 159. pp. 127-137. ISSN 0264-1275

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Abstract

The majority of industrial, automobile processes, electrical appliances emit waste heat in the low-temperature range (<573 K), hence efficient thermoelectric materials operating in this range are highly needed. Bismuth telluride (Bi2Te3) based alloys are conventional thermoelectric material for the low-temperature application. The pure Bi2Te3 sample synthesized in this work exhibits n-type conduction. We demonstrate that by small doping of Pb at Bi site a transition in electrical transport form n- to p-type is observed. The figure-of-merit (ZT) of n-type Bi2Te3 is similar to 0.47 and optimized Bi1.95Pb0.05Te3 exhibit p-type conduction with enhanced ZT of similar to 0.63 at 386 K. The conversion efficiency of Bi1.95Pb0.05Te3 based single thermoelement with hot pressed Ni/Ag electrical contacts was found to be similar to 4.9% for a temperature difference (Delta T) of 200 K. The efficiency was further enhanced to similar to 12% (at Delta T similar to 494 K) in the segmented thermoelement consisting of Bi1.95Pb0.05Te3 and (AgSbTe2)(0.15)(GeTe)(0.85) (i.e. TAGS-85)

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Materials Science
Divisions:	UNSPECIFIED
Depositing User:	Mr. Yogesh Joshi
Date Deposited:	06 Sep 2019 06:28
Last Modified:	06 Sep 2019 06:28
URI:	http://npl.csircentral.net/id/eprint/3954

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