Shah, Jyoti and Bhatt, Priyanka and Dayas, K. Diana Diana and Kotnala, R. K. (2018) Significant role of antiferromagnetic GdFeO3 on multiferroism of bilayer thin films. Materials Research Express, 5 (2). 026416-1- 026416-6. ISSN 2053-1591

PDF - Published Version
Download (1113Kb) | Preview


Inversion of BaTiO3 and GdFeO3 thin films in bilayer configuration has been deposited by pulsed laser deposition technique. A significant effect of strain on thin film has been observed by X-ray diffraction analysis. Tensile strain of 1.04% and 0.23% has been calculated by X-ray diffraction results. Higher polarization value 70.4 mu C cm(-2) has been observed by strained BaTiO3 film in GdFeO3/BaTiO3 bilayer film. Strained GdFeO3 film in BaTiO3/GdFeO3 bilayer configuration exhibited ferromagnetic behaviour showed maximum magnetization value of 50 emu gm(-1). Magnetoelectric coupling coefficient of bilayer films have been carried out by dynamic method. Room temperature magnetoelectric coupling 2500mV cm(-1)-Oe has been obtained for BaTiO3/GdFeO3 bilayer film. The high ME coupling of the BaTiO3/GdFeO3 bilayer film reveals strong interfacial coupling between ferroelectric and ferromagnetic dipoles. On magnetoelectric coupling coefficient effect of ferromagnetic GdFeO3 layer has a significant role. Such high value of ME coupling may be useful in realization of magnetoelectric RAM(MeRAM) application.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s IOP Publishing.
Subjects: Materials Science
Depositing User: Mr. Yogesh Joshi
Date Deposited: 27 Sep 2019 08:15
Last Modified: 27 Sep 2019 08:15

Actions (login required)

View Item View Item