Thakre, Atul and Kushvaha, Sunil Singh and Kumar, M. Senthil and Kumar, Ashok (2018) Negative-capacitance and bulk photovoltaic phenomena in gallium nitride nanorods network. RSC Advances , 8 (57). pp. 32794-32798. ISSN 2046-2069

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An enhanced self-powered near-ultraviolet photodetection phenomenon was observed in epitaxial gallium nitride (GaN) nanorods network grown on an intermediate layer of N:GaN on a nitridated HfO2(N:HfO2)/SiO2/p-Si substrate. The fabricated Au/GaN/N:GaN/N:HfO2/Ag heterostructure exhibited a giant change (OFF/ON ratio > 50 without applying any external electrical field) in its conductance when illuminated by a very weak (25 mW cm(-2)) near-UV monochromatic light with a low dark current (nearly 20 nA). The presented near-UV photodetector offers photoresponsivity of approximate to 2.4 mA W-1 at an applied voltage of 1 V. We observed an optically generated internal open circuit voltage of approximate to 155 mV and short circuit current approximate to 430 nA, which can be attributed to the quantum confinement of free charge carriers in the nanorod matrix. Interestingly, it also shows a negative capacitance after near-UV illumination. It has great potential as a self-powered UV photodetector and in metamaterial applications.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Royal Society of Chemistry.
Subjects: Chemistry
Depositing User: Mr. Yogesh Joshi
Date Deposited: 07 Nov 2019 11:38
Last Modified: 07 Nov 2019 11:38

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