Maheshwari, P. K. and Awana, V. P. S. (2018) Flux Free Single Crystal Growth and Characterization of FeTe1-xSx (x=0.00 and 0.10) Crystals. In: 2nd International Conference on Condensed Matter and Applied Physics (ICC), NOV 24-25, 2017, Bikaner, INDIA.
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Abstract
We report synthesis of S doped FeTe1-xSx (x= 0.00 and 0.10) single crystals using flux free method via solid state reaction. Single crystal XRD patterns of FeTe1-xSx (x= 0.00 and 0.10) confirm the single crystalline property, as the crystals are grown in (00l) plane only. Powder XRD result of FeTe1-xSx (x= 0.00 and 0.10) crystals show that crystalline in tetragonal structure having P4/nmm space group. Rietveld refinement results show that both a and c lattice parameters decreases with S doping of 10% at Te site in FeTe1-xSx. Detailed scanning electron microscopy (SEM) image of FeTe0.90S0.10 shows that the growth of crystal is in slab-like morphology. Electrical resistivity measurement results confirm the superconductivity in S doped 10% sample at Te site and superconducting transition T-c(onset) occurs at 9.5K and T-c(offset) (rho=0) occurs at 6.5K. rho-T measurement has been performed under various magnetic field up to 12 Tesla down to 2K. Upper critical field H-c2(0), for x= 0.10, which comes around 70Tesla, 60Tesla and 45Tesla of normal resistivity criterion rho(n)=90%, 50% and 10% criterion respectively.
Item Type: | Conference or Workshop Item (Paper) |
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Additional Information: | 2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC-2017) Edited by:Shekhawat, MS; Bhardwaj, S; Suthar, B Book Series: AIP Conference Proceedings Volume: 1953 Article Number: 070010 DOI: 10.1063/1.5032788 |
Subjects: | Applied Physics/Condensed Matter |
Divisions: | UNSPECIFIED |
Depositing User: | Mr. Yogesh Joshi |
Date Deposited: | 21 Nov 2019 07:24 |
Last Modified: | 21 Nov 2019 07:24 |
URI: | http://npl.csircentral.net/id/eprint/3904 |
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