Chaudhary, Deepika and Sharma, Mansi and Sudhakar, S. and Kumar, Sushil (2018) Effect of Pressure on Bonding Environment and Carrier Transport of a-Si:H Thin Films Deposited Using 27.12 MHz Assisted PECVD Process. Silicon , 10 (1). pp. 91-97. ISSN 1876-990X

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Abstract

Investigation of carrier transport in hydrogenated amorphous silicon (a-Si:H) thin films deposited at various pressures (0.03 - 0.53 Torr) using 27.12 MHz assisted high frequency Plasma Enhanced Chemical vapor Deposition (PECVD) process is presented. From results of Steady State Photocarrier Grating (SSPG) the carrier diffusion length was found to vary from 0.098 - 0.189 mu m. Moreover a direct influence of ambipolar diffusion length was observed with the transport mechanism for deposition pressure in the range (0.13 - 0.53 Torr). There was a correlation observed for photosensitivity and microstructure parameter with mobility lifetime (mu tau) product and diffusion length of carriers. Diffusion length and mu tau product were observed to be maximum (0.189 mu m and 0.471 x 10(-8) cm(2) V-1) for the film having high photosensitivity (7.2x10(3)) deposited at a rate similar to 1.39 angstrom/s at 0.53 Torr deposition pressure. In addition to electrical transport properties, the effect of deposition pressure on structural and optical properties was also studied using various characterization tools such as Raman, UV-Vis and infrared spectroscopy.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Springer Verlag.
Subjects:	Chemistry > Physical Chemistry Materials Science
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	10 Dec 2019 11:22
Last Modified:	10 Dec 2019 11:22
URI:	http://npl.csircentral.net/id/eprint/3852

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