Goel, Neeraj and Kumar, Rahul and Mishra, Monu and Gupta, Govind and Kumar, Mahesh (2018) Determination of band alignment at two-dimensional MoS2/Si van der Waals heterojunction. Journal of Applied Physics , 123 (22). pp. 225301-225308. ISSN 0021-8979

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To understand the different mechanism occurring at the MoS2-silicon interface, we have fabricated a MoS2/Si heterojunction by exfoliating MoS2 on top of the silicon substrate. Raman spectroscopy and atomic force microscopy (AFM) measurement expose the signature of few-layers in the deposited MoS2 flake. Herein, the temperature dependence of the energy barrier and carrier density at the MoS2/Si heterojunction has been extensively investigated. Furthermore, to study band alignment at the MoS2/Si interface, we have calculated a valence band offset of 0.6660.17 eV and a conduction band offset of 0.4260.17 eV using X-ray and Ultraviolet photoelectron spectroscopy. We determined a type-II band alignment at the interface which is very conducive for the transport of photoexcited carriers. As a proof-of-concept application, we extend our analysis of the photovoltaic behavior of the MoS2/Si heterojunction. This work provides not only a comparative study between MoS2/p-Si and MoS2/n-Si heterojunctions but also paves the way to engineer the properties of the interface for the future integration of MoS2 with silicon.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s American Institute of Physics.
Subjects: Applied Physics/Condensed Matter
Depositing User: Users 27 not found.
Date Deposited: 05 Dec 2019 11:33
Last Modified: 05 Dec 2019 11:33
URI: http://npl.csircentral.net/id/eprint/3838

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