Jain, Shubhendra Kumar and Mishra, Monu and Aggarwal, Neha and Krishna, Shibin and Gahtori, Bhasker and Pandey, Akhilesh and Gupta, Govind (2018) Influence of temperature and A1/N ratio on structural, chemical & electronic properties of epitaxial A1N films grown via PAMBE. Applied Surface Science, 455. pp. 919-923. ISSN 0169-4332

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Abstract

The present article investigates structural, chemical and electronic properties of epitaxial AlN films grown via plasma assisted molecular beam epitaxy on atomically clean Si (1 1 1) substrates. An inclusive optimization process of growth parameters by varying the substrate temperature (790-825 degrees C) and Al/N (III/V) ratio is demonstrated. The AlN film grown with optimized parameters yielded an FWHM of 24.6 arcmin, crystallite size of 11.6 nm, screw dislocation density of 4.43 x 10(9)/cm(2) and a surface roughness of 3.11 nm. Besides, the chemical states and electronic structure analysis displayed absence of remnant metallic aluminium and native surface oxide (-2%) with Fermi level (3.0 eV) pinned near its intrinsic value. A growth mechanism has been proposed for the optimized growth of AlN. Further, the high quality AlN film can potentially be used for the fabrication of smart optoelectronics for deep UV application and field emission devices.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Materials Science Applied Physics/Condensed Matter Physical Chemistry/Chemical Physics
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	18 Dec 2019 07:04
Last Modified:	18 Dec 2019 07:04
URI:	http://npl.csircentral.net/id/eprint/3782

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