Singh, Manjri and Kumar, Gaurav and Prakash, Nisha and Khanna, Suraj P. and Pal, Prabir and Singh, Surinder P. (2018) Large bandgap reduced graphene oxide (rGO) based n-p(+) heterojunction photodetector with improved NIR performance. Semiconductor Science and Technology, 33 (4). 045012-045021. ISSN 0268-1242

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Abstract

Integration of two-dimensional reduced graphene oxide (rGO) with conventional Si semiconductor offers novel strategies for realizing broadband photodiode with enhanced device performance. In this quest, we have synthesized large bandgap rGO and fabricated metal-free broadband (300-1100 nm) back-to-back connected np-pn hybrid photodetector utilizing drop casted n-rGO/p(+)-Si heterojunctions with high performance in NIR region (830 nm). With controlled illumination, the device exhibited a peak responsivity of 16.7 AW(-1) and peak detectivity of 2.56 x 10(12) Jones under 830 nm illumination (11 mu Wcm(-2)) at 1 V applied bias with fast response (similar to 460 mu s) and recovery time (similar to 446 mu s). The fabricated device demonstrated excellent repeatability, durability and photoswitching behavior with high external quantum efficiency (similar to 2.5 x 10(3)%), along with ultrasensitive behavior at low light conditions.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/S IOP Publishing.
Subjects:	Engineering > Electronics and Electrical Engineering Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	18 Dec 2019 07:13
Last Modified:	18 Dec 2019 07:13
URI:	http://npl.csircentral.net/id/eprint/3773

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