Agrawal, Kalpana and Gupta, Vinay and Srivastava, Ritu and Rajput, S. S. (2018) Metal-CH3NH3PbI3-Metal Tunnel FET. IEEE Transactions on Electron Devices, 65 (5). pp. 1902-1909. ISSN 0018-9383

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Abstract

A novel-gated structure of aluminum (Al)-perovskite (CH3NH3PbI3)-indium tin oxide (ITO), with Al as source and ITO as drain terminals, has been reported. Ambipolar nature of CH3NH3PbI3 has been explored for the device channel. Two Schottky junctions are present at source-channel and channel-drain junctions with barriers of 0.4 and 0.6 eV, respectively. Both, n- and p-type FET-like characteristics have been observed, when the device was biased, accordingly. The triangular tunneling has been observed in the output and transfer characteristics. The device shows a higher current on-off ratio (I-ON/(OFF)) of 10(6) with a steeper and improved sub-threshold swing (SS) of 20 +/- 2 mV/decade for P tunnel field-effect transistor (TFET). However, for N TFET, I-ON/(OFF) of 10(4) with SS of 30 +/- 2 mV/decade has been obtained.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Institute of Electrical and Electronics Engineers.
Subjects:	Engineering > Electronics and Electrical Engineering Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	18 Dec 2019 07:17
Last Modified:	18 Dec 2019 07:17
URI:	http://npl.csircentral.net/id/eprint/3763

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