Somvanshi, Divya and Chauhan, Dilip and Lao, Yan-Feng and Perera, A. G. Unil and Li, Lianhe and Khanna, Suraj Parkash and Linfield, Edmund Harold (2018) Analysis of Extended Threshold Wavelength Photoresponse in Nonsymmetrical p-GaAs/AlGaAs Heterostructure Photodetectors. IEEE Journal of Selected Topics in Quantum Electronics , 24 (2). 3801407-1-3801407-7. ISSN 1077-260X

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We analyze the extended threshold wavelength photoresponse beyond the standard threshold limit (lambda(t) = 1.24/Delta, where Delta is the activation energy) in nonsymmetrical p-GaAs/AlGaAs heterostructure photodetectors with a barrier energy offset. We propose that hot-cold hole carrier interactions in the p-GaAs absorber are responsible for the threshold wavelength extension. Experimental results are analyzed by considering a quasi-Fermi distribution of hot holes at a hot hole temperature (T-H), which is much higher than the lattice temperature (T-L). The experimental photoresponse is fitted using an escape cone model, modified with a quasi-Fermi level (E-quasiF). The simulated results are found to be in good agreement with experimental data, justifying the model used.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Institute of Electrical and Electronics Engineers.
Subjects: Engineering > Electronics and Electrical Engineering
Applied Physics/Condensed Matter
Depositing User: Users 27 not found.
Date Deposited: 04 Feb 2020 08:48
Last Modified: 04 Feb 2020 08:48

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