Singh, Sukhbir and Kumar, Sushil and Dwivedi, Neeraj (2012) Band gap optimization of p-i-n layers of a-Si:H by computer aided simulation for development of efficient solar cell. Solar Energy, 86 (5). pp. 1470-1476. ISSN 0038-092X

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The p-layer band gap and its thickness strongly influence the efficiency of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cell, i and n-layer band gaps also play key role. In the present work, p, i and n layer band gaps as 2.1 eV (at thickness 10 nm), 1.75 eV (at thickness 400 nm) and 1.95 eV (at thickness 30 nm), respectively and acceptor and donor concentrations as 1 x 10(18) cm(-3)and 1 x 10(20) cm(-3), respectively, are optimized for obtaining efficient a-Si:H p-i-n solar cell by computer aided one-dimensional AFORS-HET software. It is important to mention that when p-layer thickness is changed to 5 nm, maximum efficiency is obtained at p-layer band gap of 2.2 eV. Such an optimized value would further help to prepare efficient a-Si:H p-i-n solar cells experimentally.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier.
Subjects: Energy Fuels
Depositing User: Users 27 not found.
Date Deposited: 06 Feb 2020 07:05
Last Modified: 06 Feb 2020 07:05

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