Srivatsa, K. M. K. and Chhikara, Deepak and Kumar, M. Senthil (2012) Effect of Oxygen Admittance Temperature on the Growth of ZnO Microcrystals by Thermal Evaporation Technique. Journal of Materials Science and Technology , 28 (4). pp. 317-320. ISSN 1005-0302

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Abstract

Hexagonally well-faceted microcrystals of ZnO have been grown by thermal evaporation of Zn powder in oxygen ambient at 700 degrees C under atmospheric pressure. It has been observed that the properties (size and quality) of ZnO microcrystals have a strong dependence on the reactor temperature at which the oxygen gas is admitted into the growth zone. The microcrystals grown with oxygen admittance at 450 degrees C have a length of 1 mu m and a diameter of 0.75 mu m while that grown with oxygen admittance at 600 degrees C have a length of 1.5-2 mu m and a diameter of 1 mu m. Room temperature photoluminescence spectra show a ultraviolet (UV) emission peak at 385 nm with a green band emission at around 500 nm. The UV-to-green band emission ratio for the microcrystals grown with oxygen admittance at 450 degrees C is observed to be 1.25 and the ratio decreases to 0.45 for the sample grown with oxygen admittance at 600 degrees C.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Materials Science Metallurgy & Metallurgical Engineering
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	20 Feb 2020 08:34
Last Modified:	20 Feb 2020 08:34
URI:	http://npl.csircentral.net/id/eprint/3621

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