Kumar, Ashok and Shivareddy, Sai G. and Correa, Margarita and Resto, Oscar and Choi, Youngjin and Cole, Matthew T. and Katiyar, Ram S. and Scott, James F. and Amaratunga, Gehan A. J. and Lu, Haidong and Gruverman, Alexei (2012) Ferroelectric-carbon nanotube memory devices. Nanotechnology, 23 (16). pp. 165702-165708. ISSN 0957-4484

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One-dimensional ferroelectric nanostructures, carbon nanotubes (CNT) and CNT-inorganic oxides have recently been studied due to their potential applications for microelectronics. Here, we report coating of a registered array of aligned multi-wall carbon nanotubes (MWCNT) grown on silicon substrates by functional ferroelectric Pb(Zr, Ti)/O-3 (PZT) which produces structures suitable for commercial prototype memories. Microstructural analysis reveals the crystalline nature of PZT with small nanocrystals aligned in different directions. First-order Raman modes of MWCNT and PZT/MWCNT/n-Si show the high structural quality of CNT before and after PZT deposition at elevated temperature. PZT exists mostly in the monoclinic Cc/Cm phase, which is the origin of the high piezoelectric response in the system. Low-loss square piezoelectric hysteresis obtained for the 3D bottom-up structure confirms the switchability of the device. Current-voltage mapping of the device by conducting atomic force microscopy (c-AFM) indicates very low transient current. Fabrication and functional properties of these hybrid ferroelectric-carbon nanotubes is the first step towards miniaturization for future nanotechnology sensors, actuators, transducers and memory devices.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s IOP Publishing.
Subjects: Materials Science
Applied Physics/Condensed Matter
Nanoscience/ Nanotechnology
Depositing User: Users 27 not found.
Date Deposited: 12 Mar 2020 10:43
Last Modified: 12 Mar 2020 10:43
URI: http://npl.csircentral.net/id/eprint/3565

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